| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | VSON-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0053 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 2.7 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 100A |
| Rise Time | 5.8 ns |
| Input Capacitance (Ciss) | 2980pF @50V(Vds) |
| Fall Time | 5.2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.1 mm |
| Size-Width | 5 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD19531Q5AT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom and secondary-side synchronous rectifier applications.
● Ultra-low Qg and Qgd
● Low thermal resistance
● Avalanche rated
● Halogen-free
● Plastic package
● -55 to 150°C Operating junction temperature range
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