STF19NM65N Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-220-3
Description:	N-channel 650V, 0.25Ω, 15.5A, MDmesh(TM) 2 Power MOSFET in a TO-220FP package
Documentation:	STF19NM65N Datasheet (19 Pages)Package Outline Dimension on11 Page 12 Page 13 Page 14 Page 15 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STF19NM65N Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	270 mΩ
Power Dissipation	35 W
Drain to Source Voltage (Vds)	650 V
Breakdown Voltage (Drain to Source)	650 V
Rise Time	8 ns
Input Capacitance (Ciss)	1900pF @50V(Vds)
Fall Time	26 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	35W (Tc)

TYPE	DESCRIPTION
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.3 mm
Operating Temperature	150℃ (TJ)

ST Microelectronics

19 Pages / 0.52 MByte

ST Microelectronics

N-channel 650V, 0.25Ω, 15.5A, MDmesh(TM) 2 Power MOSFET in a TO-220FP package

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