TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 7.00 A |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 950 mΩ |
Polarity | N-Channel |
Power Dissipation | 30W (Tc) |
Drain to Source Voltage (Vds) | 600 V |
Breakdown Voltage (Drain to Source) | 600 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 7.00 A |
Rise Time | 13.6 ns |
Input Capacitance (Ciss) | 1110pF @25V(Vds) |
Input Power (Max) | 30 W |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 30W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology.
●■ Very high dv/dt capability
●■ 100% avalanche tested
●■ Gate charge minimized
●■ Low intrinsic capacitances
●■ Fast internal recovery diode
ST Microelectronics
16 Pages / 0.4 MByte
ST Microelectronics
14 Pages / 0.92 MByte
ST Microelectronics
N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH MOSFET
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