TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 500 V |
Current Rating | 12.0 A |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 400 mΩ |
Polarity | N-Channel |
Power Dissipation | 160 W |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 12.0 A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 1000pF @25V(Vds) |
Fall Time | 18 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 160W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
N-Channel 500V 12A (Tc) 160W (Tc) Through Hole TO-220AB
ST Microelectronics
18 Pages / 0.47 MByte
ST Microelectronics
19 Pages / 0.44 MByte
ST Microelectronics
N-CHANNEL 500V 0.3Ω 12A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
ST Microelectronics
N-channel 550V @ tjmax \- 0.30Ω \- 12A TO-220/FP/D2/I2PAK MDmesh⢠Power MOSFET
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