| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Dissipation | 125000 mW |
| Breakdown Voltage (Collector to Emitter) | 440 V |
| Input Power (Max) | 125 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -65℃ ~ 175℃ (TJ) |
DESCRIPTION
●Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
●■ POLYSILICON GATE VOLTAGE DRIVEN
●■ LOW THRESHOLD VOLTAGE
●■ LOW ON-VOLTAGE DROP
●■ LOW GATE CHARGE
●■ HIGH CURRENT CAPABILITY
●■ HIGH VOLTAGE CLAMPING FEATURE
●APPLICATIONS
●■ AUTOMOTIVE IGNITION
ST Microelectronics
15 Pages / 0.72 MByte
ST Microelectronics
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3Pin(2+Tab) D2PAK Tube
ST Microelectronics
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT
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