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STG3P2M10N60B
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STG3P2M10N60B Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:IGBTs
Case Package:SEMITOPR2
Description:Trans IGBT Module N-CH 600V 19A 56000mW 8Pin SEMITOP 2 Box
Documentation:STG3P2M10N60B Datasheet (12 Pages)Package Outline Dimension on9 Page10 Page
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STG3P2M10N60B Datasheet PDF (12 Pages)
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STG3P2M10N60B Specifications

TYPEDESCRIPTION
Mounting StylePC Board
Number of Pins8 Pin
Voltage Rating (DC)600 V
Current Rating19.0 A
Case/PackageSEMITOPR2
Power Dissipation56000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Capacitance (Cies).72nF @25V
Input Power (Max)56 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)56000 mW
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STG3P2M10N60B Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusUnknown
PackagingBulk
Operating Temperature-40℃ ~ 150℃ (TJ)
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STG3P2M10N60B Documents

STG3P2M10N60B Datasheet
ST Microelectronics
12 Pages / 0.43 MByte
STG3P2M10N60B Other References
ST Microelectronics
1 Pages / 0.13 MByte

STG3P2M10N60 Documents

STG3P2M10N60B Datasheet PDF
ST Microelectronics
Trans IGBT Module N-CH 600V 19A 56000mW 8Pin SEMITOP 2 Box
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