| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 65 W |
| Rise Time | 5.00 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 22 ns |
| Input Power (Max) | 65 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 65 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGB10NC60HDT4 is a Very Fast IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behaviour. It is suitable for SMPS and PFC in both hard switch and resonant topologies.
● Low on-voltage drop (VCE(sat))
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery anti-parallel diode
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