| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Dissipation | 130000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 31 ns |
| Input Power (Max) | 130 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 130000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this STGB19NC60HDT4 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 130000 mW. It has a maximum collector emitter voltage of 600 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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