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STGB30H60DLFB
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STGB30H60DLFB Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:IGBTs
Case Package:TO-263-3
Description:Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(2+Tab) D2PAK T/R
Documentation:STGB30H60DLFB Datasheet (20 Pages)Package Outline Dimension on12 Page13 Page14 Page15 Page16 Page
STGB30H60DLFB User Reference Manual Guide (51 Pages)STGB30H60DLFB Application Note (35 Pages)
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STGB30H60DLFB Datasheet PDF (20 Pages)
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STGB30H60DLFB Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Power Dissipation260000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)260 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)260000 mW
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STGB30H60DLFB Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 175℃ (TJ)
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STGB30H60DLFB Documents

STGB30H60DLFB Datasheet
ST Microelectronics
20 Pages / 1.69 MByte
STGB30H60DLFB User Reference Manual Guide
ST Microelectronics
51 Pages / 2.12 MByte
STGB30H60DLFB Application Note
ST Microelectronics
35 Pages / 2.4 MByte

STGB30H60 Documents

STGB30H60DFB Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(2+Tab) D2PAK T/R
STGB30H60DLFB Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(2+Tab) D2PAK T/R
STGB30H60DF Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 150000mW 3Pin(2+Tab) D2PAK T/R
STGB30H60DLLFBAG Datasheet PDF
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600V, 30A high speed trench gate field-stop IGBT
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