| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 14.0 A |
| Case/Package | TO-263-3 |
| Polarity | N-Channel |
| Power Dissipation | 25 W |
| Rise Time | 8.50 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 37 ns |
| Input Power (Max) | 80 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 80000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 9.35 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This powerful and secure STGB7NC60HDT4 IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 80000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
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