| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 6 Pin |
| Current Rating | 100 mA |
| Case/Package | SOT-563-6 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 6 Position |
| Polarity | NPN, PNP |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 200 @2mA, 5V |
| Input Power (Max) | 357 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -50 ℃ |
| Power Dissipation (Max) | 357 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.7 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use this versatile npn and PNP BC847BPDXV6T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6@NPN|5@PNP V.
ON Semiconductor
6 Pages / 0.1 MByte
ON Semiconductor
39 Pages / 2.8 MByte
ON Semiconductor
6 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.1 MByte
ON Semiconductor
Dual General Purpose Transistor
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
