| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Dissipation | 60000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 22 ns |
| Input Power (Max) | 60 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this STGD10NC60SDT4 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 60000 mW. It has a maximum collector emitter voltage of 600 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
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