| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Dissipation | 60000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 60 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGD10NC60KT4 IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 60000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
ST Microelectronics
20 Pages / 0.59 MByte
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