| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Dissipation | 65000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 22 ns |
| Input Power (Max) | 62 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 62000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGD10NC60HDT4 IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 65000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
ST Microelectronics
19 Pages / 0.74 MByte
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