| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 420 V |
| Input Power (Max) | 125 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STGD18N40LZT4 is an internally clamped IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diode between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low ON-state voltage drop and low threshold drive for use in automotive ignition system. It is suitable for pencil coil electronic ignition drive.
● ESD gate-emitter protection
● Gate-collector high voltage clamping
● Logic level gate drive
● Low saturation voltage
● High pulsed current capability
● Gate and gate-emitter resistor
● 180mJ Avalanche energy @ TC = 150°C, L = 3mH
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