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STGD5H60DF
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STGD5H60DF Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:IGBTs
Case Package:TO-252-3
Description:Trans IGBT Chip N-CH 600V 10A 83000mW 3Pin(2+Tab) DPAK T/R
Documentation:STGD5H60DF Datasheet (30 Pages)Package Outline Dimension on16 Page17 Page18 Page19 Page20 Page
STGD5H60DF User Reference Manual Guide (51 Pages)STGD5H60DF Application Note (35 Pages)
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STGD5H60DF Datasheet PDF (30 Pages)
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STGD5H60DF Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-252-3
Number of Positions3 Position
Power Dissipation83 W
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time134.5 ns
Input Power (Max)83 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)83000 mW
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STGD5H60DF Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length6.6 mm
Size-Width6.2 mm
Size-Height2.4 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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STGD5H60DF Documents

STGD5H60DF Datasheet
ST Microelectronics
30 Pages / 0.84 MByte
STGD5H60DF User Reference Manual Guide
ST Microelectronics
51 Pages / 2.12 MByte
STGD5H60DF Other Datasheet PDF
ST Microelectronics
17 Pages / 0.18 MByte
STGD5H60DF Application Note
ST Microelectronics
35 Pages / 2.4 MByte

STGD5H60 Documents

STGD5H60DF Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 600V 10A 83000mW 3Pin(2+Tab) DPAK T/R
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