| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Polarity | N-Channel |
| Power Dissipation | 260 W |
| Rise Time | 17.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Capacitance (Cies) | 4.55nF @25V |
| Input Power (Max) | 260 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 260 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.2 mm |
| Size-Width | 24.15 mm |
| Size-Height | 12.2 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGE50NC60VD is a very fast IGBT using the latest high voltage technology based on a patented strip layout. STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT with outstanding performances. The suffix V identifies a family optimized for high frequency. It is suitable for high frequency inverters, SMPS and PFC in both hard switching and resonant topologies.
● High current capability
● High frequency operation
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultra fast recovery anti-parallel diode
ST Microelectronics
14 Pages / 0.52 MByte
ST Microelectronics
15 Pages / 0.51 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 100A 260000mW 4Pin ISOTOP Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 260000mW 4Pin ISOTOP Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
