| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Polarity | N-Channel |
| Power Dissipation | 260 W |
| Rise Time | 17.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Capacitance (Cies) | 4.7nF @25V |
| Input Power (Max) | 260 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 260 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.2 mm |
| Size-Width | 25.5 mm |
| Size-Height | 12.2 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGE50NC60WD is a N-channel ultrafast switching PowerMESH™ IGBT using the latest high voltage technology based on a patented strip layout. STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT with outstanding performances. The suffix W identifies a family optimized for very high frequency applications. It is suitable for very high frequency inverters, HF, SMPS and PFC in both hard switching and resonant topologies.
● High current capability
● High frequency operation
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultra fast recovery anti-parallel diode
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