TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 10.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | N-Channel |
Power Dissipation | 80 W |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 10.0 A |
Breakdown Voltage (Collector to Emitter) | 600 V |
Input Power (Max) | 80 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 80000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
DESCRIPTION
●Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow erMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency appli cations (<1kHz).
●■ HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN)
●■ VERY LOW ON-VOLTAGE DROP( Vcesat )
●■ HIGH CURRENT CAPABILITY
●■ OFF LOSSES INCLUDE TAIL CURRENT
●APPLICATIONS
●■ LIGHT DIMMER
●■ STATIC RELAYS
●■ MOTOR CONTROL
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