| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 20.0 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 80000 mW |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 460 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 37 ns |
| Input Power (Max) | 80 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 80000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application (<1kHz).
●General features
●■ HIGH CURRENT CAPABILITY
●■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
●Applications
●■ LIGHT DIMMER
●■ STATIC RELAYS
●■ MOTOR CONTROL
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