| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.3 kW |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 150A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 12100pF @25V(Vds) |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 19.96 mm |
| Size-Width | 5.13 mm |
| Size-Height | 26.16 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFK150N30P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6RnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today"s demanding high-voltage conversion system.
● Avalanche rating
● Dynamic dV/dt rating
● Low Qg
● Low static drain-to-source ON-resistance
● Low drain-to-tab capacitance
● Low package inductance
● Easy to mount
● Space saving
IXYS Semiconductor
5 Pages / 0.12 MByte
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