TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 40.0 A |
Case/Package | TO-247-3 |
Power Rating | 250 W |
Number of Positions | 3 Position |
Polarity | N-Channel |
Power Dissipation | 250 W |
Gate Charge | 126 nC |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 40.0 A |
Rise Time | 13 ns |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 45 ns |
Input Power (Max) | 250 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 250 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.75 mm |
Size-Width | 5.15 mm |
Size-Height | 20.15 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGW39NC60VD is a 600V Very Fast IGBT that utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited for UPS, high frequency inverters and induction heating applications. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
● Lower CRES/CIES ratio (no cross-conduction susceptibility)
● Ultra fast freewheeling diode
● Low VCE (sat) for reduced conduction losses
● Tight parameter distribution for design simplification and easy paralleling
ST Microelectronics
15 Pages / 0.41 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
IGBT Single Transistor, 80A, 2.5V, 250W, 600V, TO-247, 3Pins
ST Microelectronics
IGBT Transistors 40 A - 600 V Very Fast IGBT
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.