| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 260 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Input Power (Max) | 260 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 260000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Don"t be afraid to step up the amps in your device when using this STGW30H65FB IGBT transistor from STMicroelectronics. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
ST Microelectronics
20 Pages / 1.64 MByte
ST Microelectronics
Trans IGBT Chip N-CH 650V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
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