| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 800 mA |
| Case/Package | E-Line-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 10000 @500mA, 5V |
| hFE Max | 5000 |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 10000 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 4.77 mm |
| Size-Width | 2.41 mm |
| Size-Height | 4.01 mm |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
Compared to other transistors, the NPN ZTX614 Darlington transistor from Diodes Zetex can provide you with a higher current gain value. This product"s maximum continuous DC collector current is 0.8 A, while its minimum DC current gain is 5000@100mA@5 V|10000@500mA@5V. It has a maximum collector emitter saturation voltage of 1.25@8mA@800mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 10 V.
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