TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Power Dissipation | 200 W |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 40 ns |
Input Power (Max) | 200 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 200 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.75 mm |
Size-Width | 5.15 mm |
Size-Height | 24.45 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
You can use this STGW30NC60KD IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 200000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
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