| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 40.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Input Capacitance | 2.90 nF |
| Gate Charge | 126 nC |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 40.0 A |
| Rise Time | 12.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 45 ns |
| Input Power (Max) | 250 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
●Features
●■ Low CRES/ CIES ratio (no cross conduction susceptibility)
●■ IGBT co-packaged with ultra fast free-wheeling diode
●Applications
●■ High frequency inverters, UPS
●■ Motor drivers
●■ HF, SMPS and PFC in both hard switch and resonant topologies
●■ Welding
●■ Induction heating
ST Microelectronics
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ST Microelectronics
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Trans IGBT Chip N-CH 600V 70A 250000mW 3Pin(3+Tab) TO-247 Tube
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ST Microelectronics
Trans IGBT Chip N-CH 600V 70A 250000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 70A 3Pin(3+Tab) TO-247 Tube
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