| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 283 W |
| Input Capacitance | 5412 pF |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Thermal Resistance | 50 ℃/W |
| Reverse recovery time | 62 ns |
| Input Power (Max) | 283 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 283 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This fast-switching STGWT40H65DFB IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 283000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology.
ST Microelectronics
19 Pages / 1.03 MByte
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 3Pin(3+Tab) TO-3P Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 3Pin(3+Tab) TO-3P Tube
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