TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 5 Pin |
Case/Package | PowerFlat-4 |
Number of Positions | 5 Position |
Drain to Source Resistance (on) (Rds) | 0.32 Ω |
Polarity | N-Channel |
Power Dissipation | 90 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 600 V |
Rise Time | 25 ns |
Input Capacitance (Ciss) | 790pF @50V(Vds) |
Input Power (Max) | 90 W |
Fall Time | 50 ns |
Operating Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 3W (Ta), 90W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 8 mm |
Size-Width | 8 mm |
Size-Height | 0.95 mm |
Operating Temperature | 150℃ (TJ) |
The STL13NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
ST Microelectronics
14 Pages / 0.81 MByte
ST Microelectronics
2 Pages / 0.91 MByte
ST Microelectronics
16 Pages / 0.85 MByte
ST Microelectronics
STMICROELECTRONICS STL13NM60N Power MOSFET, N Channel, 10A, 600V, 0.32Ω, 10V, 3V
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