| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 250 mA |
| Case/Package | TO-261-4 |
| Power Rating | 3.3 W |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 15 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 3.75 V |
| Input Capacitance | 94 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 300 mA |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 94pF @25V(Vds) |
| Input Power (Max) | 3.3 W |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.3W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STN1NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics" SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
● 100% Avalanche tested
● Improved ESD capability
ST Microelectronics
16 Pages / 0.45 MByte
ST Microelectronics
19 Pages / 0.95 MByte
ST Microelectronics
18 Pages / 0.97 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
N-CHANNEL 600V - 13Ω - 0.8A TO-92/IPAK/SOT-223 ZENER-PROTECTED SUPERMESH MOSFET
ST Microelectronics
Trans MOSFET N-CH 600V 0.44A 4-Pin(3+Tab) SOT-223 T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
