| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 11000 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-253-4 |
| Number of Positions | 4 Position |
| Power Dissipation | 450 mW |
| Input Capacitance | 1.11 pF |
| Breakdown Voltage (Collector to Emitter) | 12 V |
| Gain | 21 dB |
| hFE Min | 60 @15mA, 8V |
| Input Power (Max) | 450 mW |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 450 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Superior characteristics of this BFU550R RF amplifier from NXP Semiconductors make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This RF transistor has an operating temperature range of -40 °C to 150 °C.
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