TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 2.00 A |
Case/Package | TO-261-4 |
Number of Channels | 1 Channel |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 0.23 Ω |
Polarity | N-Channel |
Power Dissipation | 3.3 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 2.00 A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 280pF @25V(Vds) |
Input Power (Max) | 3.3 W |
Fall Time | 3 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.3W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 3.5 mm |
Size-Height | 1.8 mm |
Operating Temperature | -55℃ ~ 150℃ |
The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● -55 to 150°C Operating junction temperature range
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