| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 130 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 5.00 A |
| Case/Package | TO-261-4 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1.6 W |
| Gain Bandwidth Product | 130 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 5A |
| hFE Min | 150 @2A, 1V |
| hFE Max | 350 |
| Input Power (Max) | 1.6 W |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | 150℃ (TJ) |
The STN851 is a NPN fast-switching Power Transistor manufactured in Planar Technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
● Very low collector to emitter saturation voltage
● High current gain characteristic
● Fast-switching speed
ST Microelectronics
10 Pages / 0.22 MByte
ST Microelectronics
4 Pages / 0.21 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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