| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-39-3 |
| Power Dissipation | 1 W |
| Gain Bandwidth Product | 30 MHz |
| hFE Min | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 9.4 mm |
| Size-Width | 9.4 mm |
| Size-Height | 6.6 mm |
The three terminals of this NPN 2N5682 GP BJT from Central Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
Central Semiconductor
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Central Semiconductor
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