| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 9.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.78 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Threshold Voltage | 3.75 V |
| Input Capacitance | 2180 pF |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 2180pF @25V(Vds) |
| Input Power (Max) | 160 W |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP10NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics" SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
● Extremely high dV/dt capability
● Very low intrinsic capacitance
ST Microelectronics
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N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-channel 800V - 0.78 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET
ETC
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
ETC
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
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