| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.57 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 577pF @50V(Vds) |
| Input Power (Max) | 70 W |
| Fall Time | 9.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 70W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the STP10NM60ND power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 70000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
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