TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 650 V |
Current Rating | 11.0 A |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 450 mΩ |
Polarity | N-Channel |
Power Dissipation | 35 W |
Drain to Source Voltage (Vds) | 600 V |
Breakdown Voltage (Drain to Source) | 600 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 11.0 A |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 1000pF @25V(Vds) |
Fall Time | 11 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 65 ℃ |
Power Dissipation (Max) | 35 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.3 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
●General features
●■ High dv/dt and avalanche capabilities
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●Applications
●■ Switching application
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