TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 14.0 A |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 0.3 Ω |
Polarity | N-Channel |
Power Dissipation | 160 W |
Threshold Voltage | 3.75 V |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 7.00 A |
Rise Time | 23 ns |
Input Capacitance (Ciss) | 2260pF @25V(Vds) |
Input Power (Max) | 160 W |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 160W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 15.75 mm |
Operating Temperature | -50℃ ~ 150℃ (TJ) |
Description
●The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
●■ Extremely high dv/dt capability
●■ 100% avalanche tested
●■ Gate charge minimized
●■ Very low intrinsic capacitances
●■ Very good manufacturing repeatibility
●Applications
●■ Switching application
ST Microelectronics
19 Pages / 0.48 MByte
ST Microelectronics
12 Pages / 0.49 MByte
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