TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.37 Ω |
Polarity | N-Channel |
Power Dissipation | 90 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 600 V |
Rise Time | 7 ns |
Input Capacitance (Ciss) | 850pF @50V(Vds) |
Input Power (Max) | 90 W |
Fall Time | 9 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 90W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | 150℃ (TJ) |
The STP11NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout and associates all advantages of reduced ON-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
● The worldwide best RDS (ON) area amongst the fast recovery diode device
● Low gate input resistance
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