| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 12.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 160 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.35 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 1000pF @25V(Vds) |
| Input Power (Max) | 160 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● High dv/dt and avalanche capabilities
● Low input capacitance and gate charge
● 100% Avalanche tested
● Low gate input resistance
● Tight process control and high manufacturing yields
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