| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 13.5 A |
| Case/Package | TO-220-3 |
| Power Rating | 160 W |
| Drain to Source Resistance (on) (Rds) | 500 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 160W (Tc) |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 13.5 A |
| Rise Time | 18 ns |
| Input Capacitance (Ciss) | 2220pF @25V(Vds) |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
●■ Extremely high dv/dt capability
●■ 100% avalanche tested
●■ Gate charge minimized
●■ Very low intrinsic capacitances
●■ Very good manufacturing repeatibility
●Applications
●■ Switching application
ST Microelectronics
19 Pages / 0.6 MByte
ST Microelectronics
19 Pages / 0.77 MByte
ST Microelectronics
N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
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