| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Polarity | N-CH |
| Power Dissipation | 315 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 10750 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 120A |
| Rise Time | 62 ns |
| Input Capacitance (Ciss) | 10500pF @25V(Vds) |
| Input Power (Max) | 315 W |
| Fall Time | 106 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 315W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common source amplifier using this STP165N10F4 power MOSFET from STMicroelectronics. Its maximum power dissipation is 315000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
ST Microelectronics
12 Pages / 0.65 MByte
ST Microelectronics
13 Pages / 0.64 MByte
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