TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247 |
Number of Positions | 3 Position |
Polarity | N-Channel |
Power Dissipation | 200 W |
Rise Time | 250 ns |
Breakdown Voltage (Collector to Emitter) | 1700 V |
Reverse recovery time | 230 ns |
Input Power (Max) | 200 W |
Fall Time | 250 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 200000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Bulk |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXGR32N170H1 is a High Voltage IGBT with diode. It is suitable for DC choppers, capacitor discharge and pulse circuits.
● Electrically isolated tab
● High current handling capability
● MOS gate turn-ON - drive simplicity
● Rugged NPT structure
● UL94V-0 Flammability rating
IXYS Semiconductor
3 Pages / 0.08 MByte
IXYS Semiconductor
8 Pages / 0.13 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR32N170H1 IGBT Single Transistor, Isolated, 26A, 3.5V, 200W, 1.7kV, TO-247AD, 3Pins
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 26A 200000mW 3Pin(3+Tab) ISOPLUS 247
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