| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.26 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 1000 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 1000pF @50V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-220AB
ST Microelectronics
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ST Microelectronics
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N-channel 600V, 0.25Ω typ., 13A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
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