| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 20.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 45 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 290 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 192 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1.30 nF |
| Gate Charge | 37.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Input Power (Max) | 192 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 192W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The STP20NM60FD is a FDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The FDmesh™ associates all advantages of reduced ON-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
● High dV/dt and avalanche capabilities
● Low gate input resistance
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ST Microelectronics
N-CHANNEL 600V - 0.25Ω - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
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