TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 18.0 A |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 150 mΩ |
Polarity | N-Channel |
Power Dissipation | 140 W |
Input Capacitance | 1.95 nF |
Gate Charge | 65.0 nC |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Breakdown Voltage (Gate to Source) | ±25.0 V |
Continuous Drain Current (Ids) | 18.0 A |
Rise Time | 18 ns |
Input Capacitance (Ciss) | 1950pF @25V(Vds) |
Fall Time | 30 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 140W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | 150℃ (TJ) |
N-Channel 500V 18A (Tc) 140W (Tc) Through Hole TO-220AB
ST Microelectronics
18 Pages / 0.45 MByte
ST Microelectronics
19 Pages / 0.43 MByte
ST Microelectronics
MOSFET N-CH 500V 18A TO-220
ST Microelectronics
N-channel 500V \- 0.15Ω \- 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh⢠Power MOSFET
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