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STY100NS20FD Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-247-3
Description:	Max247 N-CH 200V 100A
Documentation:	STY100NS20FD Datasheet (12 Pages)Package Outline Dimension on9 Page 10 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STY100NS20FD Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Voltage Rating (DC)	200 V
Current Rating	100 A
Case/Package	TO-247-3
Drain to Source Resistance (on) (Rds)	24.0 mΩ
Polarity	N-Channel
Power Dissipation	450 W
Input Capacitance	7.90 nF
Gate Charge	360 nC
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	100 A
Rise Time	140 ns
Input Capacitance (Ciss)	7900pF @25V(Vds)
Input Power (Max)	450 W
Fall Time	140 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	450W (Tc)