TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.135 Ω |
Power Dissipation | 170 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 600 V |
Rise Time | 7.2 ns |
Input Capacitance (Ciss) | 1440pF @100V(Vds) |
Input Power (Max) | 190 W |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 170W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 15.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use STMicroelectronics" STP28N60M2 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 170000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes mdmesh ii technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
22 Pages / 0.86 MByte
ST Microelectronics
21 Pages / 1.15 MByte
ST Microelectronics
Trans MOSFET N-CH 600V 24A 3Pin TO-220 Tube
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