| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.092 Ω |
| Polarity | N-Channel |
| Power Dissipation | 210 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 34 ns |
| Input Capacitance (Ciss) | 2722pF @100V(Vds) |
| Input Power (Max) | 210 W |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | 150℃ (TJ) |
The STP34NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
ST Microelectronics
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ST Microelectronics
STMICROELECTRONICS STP34NM60N Power MOSFET, N Channel, 29A, 600V, 0.092Ω, 10V, 3V
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