| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.097 Ω |
| Polarity | N-Channel |
| Power Dissipation | 210 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 29A |
| Rise Time | 53.4 ns |
| Input Capacitance (Ciss) | 2785pF @50V(Vds) |
| Input Power (Max) | 210 W |
| Fall Time | 61.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | 150℃ (TJ) |
The STP34NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ V Power MOSFET produced using ST"s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low ON-resistance that is unrivalled among silicon-based Power MOSFET and superior switching performance with intrinsic fast-recovery body diode.
● The worldwide best RDS (ON) area amongst the fast recovery diode device
● Low gate input resistance
● Extremely high dV/dt and avalanche capabilities
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STMICROELECTRONICS STP34NM60N Power MOSFET, N Channel, 29A, 600V, 0.092Ω, 10V, 3V
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