| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 36.0 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 32 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Input Capacitance | 2.80 nF |
| Gate Charge | 70.0 nC |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 36.0 A |
| Rise Time | 85 ns |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
DESCRIPTION
●This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a remark
●able manufacturing reproducibility.
●■ TYPICAL RDS(on)= 0.032Ω
●■ EXCEPTIONAL dv/dt CAPABILITY
●■ 100% AVALANCHE TESTED
●■ LOW GATE CHARGE 100°C
●■ APPLICATION ORIENTED CHARACTERIZATION
ST Microelectronics
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